| abstract |
(57) [Summary] [Purpose] To significantly improve the adhesion of refractory metals such as tungsten deposited on diamond. [Composition] Low pressure chemical vapor deposition (300-700 ℃, 0.1-3.0 by depositing a thin (10-10,000 angstrom) first coating of refractory metal on a substantially clean diamond surface by torr) and then heat treating the coating and diamond (non-oxidizing atmosphere, 700-1200 ° C, 5-60). Adhesion of the refractory metal coating (for example, 15 μm tungsten) to the diamond by continuously depositing the refractory metal until the desired thickness (400 to 800 ° C., 0.1 to 3.0 torr). The force value exceeded 10,000 psi. The diamond surface may have a hole shape. |