http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07168371-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 1993-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37de224d95bebcb9677fda647c95c134 |
| publicationDate | 1995-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07168371-A |
| titleOfInvention | Method for removing resist development residue |
| abstract | (57) [Summary] [Purpose] Without ashing by plasma, To provide a method for removing a development residue of a resist by wet etching. [Structure] L as a negative resist containing p-cresol novolac resin and 1,2-naphthoquinonediazide When performing photolithography using MR, first, The LMR 12 is applied on the base 10 of the semiconductor substrate to a thickness of 1 μm. Next, the LMR 12 is exposed using an i-line stepper. At this time, exposure is performed with an exposure amount that can be held by the exposed portion 12a of the LMR 12. Next, the exposed LMR12 Is developed using a developing solution for LMR. Next, the development residue 16 of the developed LMR is removed by etching using an alkaline solution. |
| priorityDate | 1993-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.