http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07157392-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6191997ed6dda6a5a3582e10b0b3dbc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 |
| filingDate | 1993-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_731fb004cd98c22db926a4a31b03691b |
| publicationDate | 1995-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07157392-A |
| titleOfInvention | Vapor growth method |
| abstract | (57) [Abstract] [Purpose] When performing vapor phase growth using the same substrate mounting member over multiple runs without cleaning, (EN) A vapor phase growth method capable of effectively preventing variations in the composition of an epitaxial film of un, from occurring among runs, thereby improving the manufacturing yield of substrates with an epitaxial film. [Structure] Introducing a source gas into the crystal growth chamber to vapor-deposit a thin film on the surface of a substrate placed on the substrate mounting member in the crystal growth chamber, after cleaning the substrate mounting member in advance. The surface of the substrate mounting member, excluding the region on which the substrate is originally mounted, is coated with a film having the same composition or similar characteristics as the thin film. When an InGaAsP film, for example, as such a film is formed on the surface of the substrate mounting member, a cleaned and baked substrate mounting member on which a dummy substrate is mounted is placed in the crystal growth chamber and the crystal growth is performed. After introducing trimethylindium and triethylgallium into the chamber and stopping them, AsH 3 and PH 3 are introduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015216164-A |
| priorityDate | 1993-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.