http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0714787-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 |
filingDate | 1993-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17e34e3a6998d8c0c76de644b7f1ff8f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af06b0f7ddc9c5a8a43a46543c23d13d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0486ffc54cec9728e3de5a9bba740c1c |
publicationDate | 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0714787-A |
titleOfInvention | Method for manufacturing II-VI compound semiconductor |
abstract | (57) [Summary] [Structure] In vapor phase growth of a II-VI group compound semiconductor thin film, a thin film is grown by repeatedly introducing a Group II source material and a halide gas and / or a halogen gas into the growth chamber. And a method for manufacturing a semiconductor. [Effects] According to the present invention, it is possible to flatten a hetero interface and grow a high quality crystal without depositing a polycrystal on a mask over a wide range. In the present invention, the growth rate is slightly reduced by the addition of a slight amount of HCl, but the reproducibility and controllability of the conventional thin film growth remain sufficiently, which is a practically effective method. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6036771-A |
priorityDate | 1993-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.