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filingDate 1993-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17e34e3a6998d8c0c76de644b7f1ff8f
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publicationDate 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0714787-A
titleOfInvention Method for manufacturing II-VI compound semiconductor
abstract (57) [Summary] [Structure] In vapor phase growth of a II-VI group compound semiconductor thin film, a thin film is grown by repeatedly introducing a Group II source material and a halide gas and / or a halogen gas into the growth chamber. And a method for manufacturing a semiconductor. [Effects] According to the present invention, it is possible to flatten a hetero interface and grow a high quality crystal without depositing a polycrystal on a mask over a wide range. In the present invention, the growth rate is slightly reduced by the addition of a slight amount of HCl, but the reproducibility and controllability of the conventional thin film growth remain sufficiently, which is a practically effective method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6036771-A
priorityDate 1993-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.