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filingDate 1993-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8179abc124774a05d1bdc3077157b794
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publicationDate 1995-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07147407-A
titleOfInvention Thin film transistor element and manufacturing method thereof
abstract (57) [Abstract] [PROBLEMS] To provide a thin film transistor element capable of achieving the hydrofluoric acid resistance and the withstand voltage of a first insulating film, and a method for manufacturing the same. [Structure] A first electrode 2 formed on an insulating substrate 1, and Two or more first layers including a pressure resistant layer and a hydrofluoric acid resistant layer formed on the surface of the first electrode 2 by anodic oxidation. Of the insulating film 3, a second insulating film 4 formed on the first insulating film 3 by means other than anodic oxidation, and a channel stopper layer 6 formed on the second insulating film 4. The semiconductor layer 5 and the second electrode 7 formed on the semiconductor layer 5 are provided.
priorityDate 1993-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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