http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07147128-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-304
filingDate 1993-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d03e036b7b56d9987b82bb49d91420c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c708a6a4e9b4ef0c41f6f352aca47042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca5be0396636be8276341bf50f9d0b71
publicationDate 1995-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07147128-A
titleOfInvention Cold cathode electron source element
abstract (57) [Summary] [Object] The present invention provides a cold cathode electron source capable of being driven at a low voltage, stably obtaining a high emission current, excellent in processability of a cold cathode, and capable of increasing the area of an element. Provide the element. The cold cathode electron source device of the present invention comprises a cold cathode substrate 1 0 and a conductive material whose work function dispersedly contained in the cold cathode substrate 10 is lower than the work function of the cold cathode substrate 10. With this configuration, electrons can be drawn out at a low voltage, so that a high emission current can be obtained, driving by IC, TFT, etc. can be achieved, and high performance and low power consumption of the device can be achieved, and ordinary photoprocess can be performed. The cold cathode substrate can be processed by etching, and an arbitrary shape can be easily set, so that the area of the element can be increased.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100769721-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6417606-B1
priorityDate 1993-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 20.