http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07141892-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5198a2a21392d6cbc0bb4898b3fb3d29 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
| filingDate | 1993-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f65aa5341ab5f809193708ce3f504de3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a78ff2e2cb3d893d37e1f97cc8e32cbe |
| publicationDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07141892-A |
| titleOfInvention | Nonvolatile semiconductor memory device |
| abstract | (57) [Abstract] [Purpose] To improve the disturbance tolerance of flash EEPROM. A plurality of threshold voltage detection levels for comparing and collating with a threshold voltage of a memory cell are provided in a sense amplifier circuit SAMP, and when the information is read from the memory cell, the threshold voltage of the memory cell is Based on this comparison, the presence / absence of disturbance of the information stored in the memory cell and the original information before the disturbance are extracted based on this comparison. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009140564-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5943266-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008539533-A |
| priorityDate | 1993-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.