| abstract |
(57) [Summary] [Object] To obtain excellent performance in a monolithic active matrix circuit including an active matrix circuit formed using thin film transistors (TFTs) and a peripheral circuit for driving the same. And [Configuration] TFT using an amorphous or substantially amorphous semiconductor in an active matrix circuit In the peripheral circuit, a top gate type TFT using a semiconductor crystallized by irradiation of a laser or strong light equivalent thereto is used. Further, at least the TFT of the peripheral circuit has a silicide region, a channel formation region, and a high resistance region sandwiched between them in the active layer. By doing so, the leak current is small in the active matrix region and the charge retention characteristics are improved, while the peripheral circuits can operate at high speed. As a result, a large-scale matrix or the like having more than 1000 scanning lines can be manufactured. |