http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07130667-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1993-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a7f6a0ed32d77d8dc173112aeddd3b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2725a7434bb2363b523b14af7488a05 |
| publicationDate | 1995-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07130667-A |
| titleOfInvention | Metal-organic vapor phase epitaxial growth method |
| abstract | (57) [Summary] [Objective] When an n-type III-V compound semiconductor thin film is grown on a III-V compound semiconductor substrate or a thin film, hydrogen of Si or a VI element is used as an n-type impurity. Compound is used. However, Si hydride has a risk of explosion and lacks safety. Group VI hydrides are highly toxic. (EN) Provided is a method of vapor phase growth of a III-V group compound semiconductor, which has no danger of explosion and is less toxic and has high safety. As the n-type impurity, tetramethylsilane, tetraethylsilane, tetranormalpropylsilane, or tetranormalbutylsilane, which is an organic metal of Si, is used, or dimethyl tellurium, diethyl tellurium, or ditellurium which is an organic metal of Te is used. Normal propyl tellurium or similar organometals such as selenium and sulfur are used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014078595-A |
| priorityDate | 1993-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.