| abstract |
(57) [Summary] [Objective] As a pretreatment for forming a gate insulating film on a gate electrode of a thin film transistor using anodization, UV irradiation is performed after a photo process, or resist post baking is performed in the photo process. Anodization is performed without performing it, suppressing the melting of Al and enabling a thick film. [Structure] A gate electrode metal is deposited on a glass substrate 1 to form a gate electrode. Next, each process is performed before anodic oxidation to form a gate insulating film 3 by anodic oxidation, and a SiNx film 4, amorphous Si 5, n + amorphous layer 6, pixel electrode 7, source, drain electrodes 8 and 9 are formed. , A thin film transistor. |