| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20930b993c6d8de1b16076191a59fa53 |
| publicationDate |
1995-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07115083-A |
| titleOfInvention |
Etching method for silicon oxide film |
| abstract |
(57) [Summary] [Object] To prevent particles on the wafer edge of the resist film 3 from becoming a particle in an etching method of wet etching the silicon oxide film 2 on the semiconductor wafer 1 using the resist film as a mask. . [Structure] A portion of the silicon oxide film 2 located on the wafer edge is removed, and then the silicon oxide film 2 on the semiconductor wafer 1 is removed by etching using the resist film 4 as a mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8691690-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100420559-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0928018-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0928018-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100562213-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8753460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8807184-B2 |
| priorityDate |
1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |