http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07113172-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b251da0bd11533b715caeec7a0b3a42b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a713fc41e086db9616ac88b610bacc35 |
| publicationDate | 1995-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07113172-A |
| titleOfInvention | Thin film processing collimator, thin film processing apparatus, thin film processing method, and semiconductor device wiring forming method |
| abstract | (57) [Abstract] [Purpose] A method for controlling the flow of various materials used for thin film processing (hereinafter also simply referred to as thin film processing raw materials) such as vapor deposition materials, sputtered particles, CVD source gas separation, and excited active species. (EN) A wiring forming method capable of effectively preventing surface roughness of a wiring layer made of an aluminum-based alloy. [Structure] A collimator 10 is arranged in a thin film processing apparatus 20 for processing a thin film under vacuum or reduced pressure. It has a plurality of regularly arranged slits 12 for passing a raw material for thin film processing. A wiring forming method for a semiconductor device is a wiring forming method for a semiconductor device, in which a TiN layer is formed on an insulating layer formed on a substrate by a sputtering method and then an aluminum layer is formed on the TiN layer. On the other hand, a TiN layer is formed on the insulating layer by performing sputtering from an oblique direction. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006330656-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03078677-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1350863-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002109729-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010222640-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4502160-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005041172-A1 |
| priorityDate | 1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.