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filingDate 1993-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb05f971d79a336265eac1fcf31ecf32
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publicationDate 1995-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0711309-A
titleOfInvention Method for producing compound ultrafine particles
abstract (57) [Summary] (Revised) [Purpose] A compound superfine particle size and composition was precisely controlled by utilizing the phenomenon of spontaneous alloying that occurs in ultrafine particles with a particle size of several nanometers at room temperature or below. Fine particles, especially CdSe, Au Zn, AuSb 2 , InSb, GaAs, AlSb, Z nSe, AuPb 2 , Au 2 Pb, CdS, SiNi, A method for producing compound ultrafine particles for efficiently obtaining a photocatalyst such as Si 2 Ni, a compound semiconductor, and a superconducting material. [Structure] After depositing the first element on the surface of the substrate material 1 by a vacuum vapor deposition, a sputtering method, a CVD method, or an electron beam vapor deposition so as to have a grain size of 2 to 30 nm, which is equal to or less than the critical size, the second and subsequent elements are deposited. Is deposited to a size of 2 to 50 nm, the reaction temperature is 32 ° C. or lower to −173 ° C., and the vacuum condition is 10 -11 to 10 -1 Torr is caused to react on the substrate 1 at a vacuum degree, and the first element and the second and subsequent elements are spontaneously alloyed to form the compound 4. A method for producing compound ultrafine particles, which comprises sequentially depositing at an area density.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012217970-A
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