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filingDate 1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1995-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07111365-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) [Summary] [Structure] An n-type dopant such as Si or Se is diffused into the end face of a semiconductor laser having InGaAs or InGaAsP as an active layer, and the emission wavelength of the diffusion region of the active layer is changed to a non-diffusion region inside the active layer. Of the emission wavelength and the wavelength of the laser light are shifted to the shorter wavelength side. The diffusion method is DMSe, DMS Gas diffusion by an open tube method using a gas such as i, H 2 Se is used. [Effect] By expanding the energy gap, the absorption of laser light near the end face can be reduced, heat generation and light damage can be suppressed, and high output and longevity can be achieved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101413956-B1
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