http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07111365-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
filingDate | 1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f931dbdaf3fdd427c2eb0eebb3d796df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e037495c6a312ac3cf906a2d054a958 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d5d2ae0c572c0bdb712e5bd677949bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89fb203f3269b94eddb503a9fbec5ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c6668bdd270e5f7d4c458a9a9863e18 |
publicationDate | 1995-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H07111365-A |
titleOfInvention | Semiconductor device and manufacturing method thereof |
abstract | (57) [Summary] [Structure] An n-type dopant such as Si or Se is diffused into the end face of a semiconductor laser having InGaAs or InGaAsP as an active layer, and the emission wavelength of the diffusion region of the active layer is changed to a non-diffusion region inside the active layer. Of the emission wavelength and the wavelength of the laser light are shifted to the shorter wavelength side. The diffusion method is DMSe, DMS Gas diffusion by an open tube method using a gas such as i, H 2 Se is used. [Effect] By expanding the energy gap, the absorption of laser light near the end face can be reduced, heat generation and light damage can be suppressed, and high output and longevity can be achieved. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101413956-B1 |
priorityDate | 1993-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.