http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0697096-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57ccb805d1b0c4b3a1d967edfeeeef8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6dacaa0ceae8e4330441f7bb1f70cb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37a8fa0791014ec7e45959c691394e10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate | 1992-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e5b519034f79c6783855aad1b108fd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f483b91f60d3c3eb575b96644c3525b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd4e9c3664ba7bc4557b3d66757704e |
| publicationDate | 1994-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0697096-A |
| titleOfInvention | Method of growing compound semiconductor single crystal thin film |
| abstract | (57) [Summary] [Objective] To improve the quality of the crystal growth layer by controlling the stoichiometric composition, and to form a monolayer or bilayer epitaxial growth film per gas introduction cycle. [Structure] Only a gaseous compound molecule containing one component element of a compound semiconductor is deposited on a semiconductor single crystal substrate for 0.5 to 200 seconds within a pressure range of 10 -1 to 10 -7 Pascal in a growth tank. After the gas is introduced through the nozzle and exhausted, only the gaseous compound molecule containing the other component element remaining in the compound semiconductor is 0.5 in the range where the pressure in the growth tank is 10 -1 to 10 -7 Pascal. By introducing a series of operations on the semiconductor single crystal substrate through the second nozzle for about 200 seconds and exhausting the same, the semiconductor single crystal substrate is heated to 300 to 800 ° C. and repeated to obtain a compound having a desired thickness. A single crystal thin film of a semiconductor is grown in a unit of the thickness of one comono molecular layer per one cycle of the above-mentioned operation, and by repeating this, a single crystal thin film having a desired number of molecular layers is grown. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101462243-B1 |
| priorityDate | 1992-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.