| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_682d6117f1aef86a7b2b9af096d7d98a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0605 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02C7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate |
1991-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_031d99775f1a1a3a92d951b2353c4c20 |
| publicationDate |
1994-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0688209-A |
| titleOfInvention |
Method for depositing diamond-like carbon film on a substrate having a low melting point |
| abstract |
(57) [Summary] (Modified) [Purpose] A method for depositing a diamond-like carbon film on the surface of a plastic substrate without melting the substrate and accumulating a large amount of repulsive charge around the substrate. provide. Constitution: Solid carbon source 106 in a sealed vacuum chamber 100 When vaporizing carbon while irradiating the electron beam to the electron beam, the high frequency RF pressure of the second pressure, which is low enough to stabilize the electron beam and maintains the first pressure near the electron beam, and which is higher than the first pressure. While being applied by the RF source 135, the substrates 115a, 115 are placed in the vacuum chamber 100. Holds b and 115c. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020031250-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008532792-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6672427-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2021075384-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6708868-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022511610-A |
| priorityDate |
1990-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |