| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-923
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-03 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
1993-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85581cf31ca3622405a73510862fc48a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cc642dcc7fde78d8ed1fa7deb72164e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_097afc2bed5e0325a520c3d35056cae2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146fc1694453feb9b7a0846a4fd6f612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ce5f99df0a2edcb030587faa7ba0f20 |
| publicationDate |
1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0684819-A |
| titleOfInvention |
Method for producing highly doped semiconductor material |
| abstract |
(57) [Abstract] [PROBLEMS] To provide a method for diffusion-doping semiconductor chips and wafers, particularly silicon chips and wafers, at a peak concentration of more than 3 × 10 19 atoms / cm 3 . The semiconductor material to be doped is placed in a furnace 57. The furnace atmosphere contains a carrier gas 20 and a dopant-containing gas 22. The dopant-containing gas is greater than about 0.1% by volume of the total volume of the furnace chamber. The mixed gas pressure is greater than about 0.1 torr. The gas mixture contains an oxidizer at a concentration less than about 1 ppm. According to the method of the present invention, the silicon surface is directly doped, and the peak concentration is high and shallow n is obtained by the diffusion process. Since the type doping region can be formed, damage to the silicon surface due to general ion implantation for obtaining a high doping concentration can be eliminated. Since this method is omnidirectional, the sidewalls of the trench can be heavily doped. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8449675-B2 |
| priorityDate |
1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |