http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0669132-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1992-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce6d5a9540e697ed45c64e56248c2bc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d46a138c643e585758c1e4adac0d3d41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e46e1f3ca8cb3f69cbb455166cf43285 |
| publicationDate | 1994-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0669132-A |
| titleOfInvention | Vapor phase growth equipment |
| abstract | (57) [Abstract] [Objective] Regarding a vapor phase growth apparatus, a source gas is efficiently decomposed on a substrate and the consumption of the source gas is reduced. A vapor phase growth apparatus for performing the D method is intended. [Structure] A vapor phase growth apparatus equipped with a reaction vessel 1 on which a substrate 3 is installed and a plurality of gas introduction pipes 4A, 4B, 4C, 4D connected to the reaction vessel 1 and introducing raw material gases having different decomposition temperatures. In this case, each of the plurality of gas introduction pipes 4A, 4B, 4C, 4D is provided with a temperature control means 11 capable of heating or cooling, and the raw material in each of the gas introduction pipes 4A, 4B, 4C, 4D The temperature of the gas is controllable. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012501067-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07273036-A |
| priorityDate | 1992-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.