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filingDate 1993-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1994-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0661464-A
titleOfInvention Method of manufacturing semiconductor image sensor and image sensor assembly
abstract (57) [Abstract] [Purpose] To reduce streaks in a semiconductor image sensor. [Structure] An image sensor 10 is composed of a silicon substrate (semiconductor substrate) 11, on which a first dielectric layer 12 and a polysilicon gate electrode 1 are formed. 3, 14, 15 and the second dielectric layer and the passivation layer 17 have been deposited. The upper surface 17a of the passivation layer 17 is not flat along the exposed contours of the first dielectric layer 12, the second dielectric layer portions 16a and 16b, and the gate electrode 15. On the upper surface 17 a of the passivation layer 17, the planar layer 18 and the planar layer 1 Color filter array layer 19 covering the planar surface 18a of FIG. There is. The planar layer 18 provides a smooth and uniform surface for coating and depositing the color separator in the active device area and provides access to the bond pads.
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