http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0661259-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1992-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54419eb2bd82df8b3babd7bd0e750055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d797c35a0b6f6bd37fc3b0b99f4d65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fc630131db989486ae6fec84c6d3987 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad1c4c7d15522c179bb7f5d0a2c5f215 |
| publicationDate | 1994-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0661259-A |
| titleOfInvention | Method of manufacturing thin film transistor |
| abstract | (57) [Abstract] [Objective] The present invention is a TFT active matrix LCD. A method of manufacturing a TFT used in a method, which prevents a disconnection of an operating semiconductor layer or abnormal growth of an operating semiconductor layer at an end portion of a source electrode and a drain electrode, and a multilayer conductor film forming a source electrode and a drain electrode. It is an object of the present invention to provide a method of manufacturing a TFT capable of preventing contact failure between the TFTs. A method of manufacturing a staggered thin film transistor, which comprises forming a first conductor film 35 on a first substrate 34, and then patterning the first conductor film 35 so that the first conductor film 35 and the first conductor film 35 are opposed to each other with a predetermined space therebetween. A step of leaving the conductor film 35, and exposing the first conductor films 35a and 35b to a gas containing a conductor, a film 37 containing the first conductor on the first conductor films 35a and 35b. It includes a step of selectively forming a and 37b and a step of selectively forming the first semiconductor films 38a and 38b on the films 37a and 37b containing the first conductive material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841661-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015164185-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001077366-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006080487-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010226097-A |
| priorityDate | 1992-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.