http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0661150-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1992-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d1c849eea524ec8cc10b411adac0de5 |
| publicationDate | 1994-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0661150-A |
| titleOfInvention | Compound semiconductor device and planar doping method |
| abstract | (57) [Summary] [Object] To provide a compound semiconductor device having a sheet carrier concentration higher than the conventional saturation value, and a planar doping method suitable for its fabrication. A compound semiconductor device includes a III-V group compound semiconductor layer, a doping gas formed in the compound semiconductor layer, a first gas containing a group V element of the compound semiconductor layer as a main component, and the V group. A planar doping layer formed based on a second gas containing a group V element different from the group element as a main component is provided, and the bonding energy between the main component element of the doping gas and the group V element of the second gas is V that constitutes the compound semiconductor layer with the main element of the doping gas It is characterized by being equal to or larger than the bonding energy of the group element. Planar doping method II A doping gas, the first gas, and the second gas are supplied on the IV compound semiconductor layer to form a planar doping layer on the compound semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11092763-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10088642-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11016255-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10613283-B2 |
| priorityDate | 1992-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.