http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H065986-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 1992-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03733cfa8e9978936b4397d50ec17b40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e91fd604de7fa66bf8b1dcc5468ada7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efb3560cb40a21fd87140306e7a23f94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2551b7c43450b9160103e037f66a715 |
| publicationDate | 1994-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H065986-A |
| titleOfInvention | Semiconductor laser manufacturing method |
| abstract | (57) [Summary] [Objective] To provide a manufacturing method for mass-producing high-power semiconductor lasers with excellent reliability and high yield. [Configuration] p-type cladding layer, the active layer, n-type cladding layer each p- (Al 0. 6 Ga 0.4) 0.5 In 0.5 P, an undoped Ga 0.5 In 0.5 P, n- ( Al 0.6 Ga 0.4) 0.5 I The resonator end face of the laser bar 11 (n 0.5 P) (R Both sides of the region) are irradiated with plasma of phosphine excited by the RF coil 13 while controlling the temperature of the laser bar 11 at 400 ° C. or less, and hydrogen atoms are injected in the vicinity of the end face of the resonator. As a result, a high resistance region is formed with a precision of 1 μm or less in a thin range of several microns in the vicinity of the end face of the resonator, without deterioration of crystallinity due to phosphorus defects caused by damage. As a result, it is possible to easily manufacture a high-yield semiconductor laser with high linearity of IL characteristics, low drive current, and high COD level with high yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002261387-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6133058-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5751013-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5895225-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100290076-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11121877-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6136626-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6067310-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9603776-A1 |
| priorityDate | 1992-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.