| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate |
1992-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1a1758e50a67be3fb2a771e1eb3763f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_655d45ce403fea8d21ad0132f52d4d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1b2417b3f3193215090a28c13cf5224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c94922852cc404b372513e56db829a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3f04b477380b0908b2db21eed4819f8 |
| publicationDate |
1994-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0653548-A |
| titleOfInvention |
GaP light emitting device substrate and method for manufacturing the same |
| abstract |
(57) [Abstract] [Purpose] It is possible to manufacture a light emitting device with high brightness. Provided are an aP light emitting device substrate and a method for manufacturing the same. A GaP-based light-emitting element substrate in which an n-type GaP layer and a p-type GaP layer are sequentially formed on an n-type GaP single crystal substrate, wherein the carbon concentration of the n-type GaP single crystal substrate is 1.0 × 10 17 pieces / cc or less. G for n-type GaP single crystal substrate Liquid sealed Czochralski method (LEC method) for aP single crystal In the case of growing by the method described above, boron oxide (B 2 O 3 ) containing at least 200 ppm of water as a sealing liquid is used. To use. |
| priorityDate |
1992-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |