http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0637302-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50311cab14c8e00e0d2220ff953d68a2 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
filingDate | 1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc071eaa65cf69b268c90c075b4340d0 |
publicationDate | 1994-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0637302-A |
titleOfInvention | Tunnel transistor |
abstract | (57) [Abstract] [Purpose] An object is to provide a small-sized, high-speed transistor with high input impedance and low power consumption. According to the tunnel transistor of the present invention, a gate electrode is provided on a Schottky junction, which is a junction between a semiconductor and a metal, a semiconductor pn + junction, or a semiconductor n−p + junction via an insulating thin film, By adjusting the gate voltage Vg, a high carrier concentration storage layer is formed near the semiconductor interface, and a tunnel junction can be formed between the storage layer and a metal or a high carrier concentration semiconductor (n + or p + ). It controls the tunnel current. |
priorityDate | 1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6338112 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099809 |
Total number of triples: 18.