http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0637302-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50311cab14c8e00e0d2220ff953d68a2
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
filingDate 1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc071eaa65cf69b268c90c075b4340d0
publicationDate 1994-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0637302-A
titleOfInvention Tunnel transistor
abstract (57) [Abstract] [Purpose] An object is to provide a small-sized, high-speed transistor with high input impedance and low power consumption. According to the tunnel transistor of the present invention, a gate electrode is provided on a Schottky junction, which is a junction between a semiconductor and a metal, a semiconductor pn + junction, or a semiconductor n−p + junction via an insulating thin film, By adjusting the gate voltage Vg, a high carrier concentration storage layer is formed near the semiconductor interface, and a tunnel junction can be formed between the storage layer and a metal or a high carrier concentration semiconductor (n + or p + ). It controls the tunnel current.
priorityDate 1992-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6338112
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099809

Total number of triples: 18.