| abstract |
(57) [Summary] [Structure] A lithographic undercoat material comprising a copolymer of glycidyl methacrylate and methyl methacrylate or containing an ultraviolet absorber therein, and (A) a substrate comprising the above-mentioned undercoat material. Forming a first layer consisting of: (B) providing a second layer consisting of a positive resist on the first layer, exposing, and then developing, and patterning; (C) patterning Patterning the first layer made of the base material by a step of silylating the formed resist layer with a vapor containing silicon, and (D) a dry etching method using an oxygen-based gas with the silylated resist pattern as a mask. It is a method of forming a pattern by sequentially performing the steps. [Effect] A resist pattern having a rectangular cross section and a high resolution and a high selection ratio can be easily obtained by a simplified process. |