| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate |
1993-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e227b6d22e9b748c5cd56dc3911b2165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4618062037a93addb147dad6c2dc4ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49795cdff51adc7bb999c15a00920332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa423d8f11ea1fbe0457118de39b86a3 |
| publicationDate |
1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06346240-A |
| titleOfInvention |
Method of forming thin film |
| abstract |
(57) [Summary] (Modified) [Object] An object of the present invention is to provide a method for forming a metal thin film having a high film formation rate. According to the method for forming a thin film of the present invention, a source gas containing an Al component and a source gas containing a Cu component are supplied, and an Al layer 51 and a Cu layer are formed in a desired region by chemical vapor deposition. In the metal thin film forming method for forming the metal thin film 53 including a plurality of layers including the layer 52, a monovalent organic Cu compound hydrate is used as the source gas containing the Cu component. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100341153-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066930-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6351026-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6089184-A |
| priorityDate |
1993-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |