| abstract |
(57) [Abstract] [PROBLEMS] To provide a wiring structure of a semiconductor integrated circuit, which has low resistance and high electromigration resistance, and prevents diffusion of atoms of a wiring material into an insulating film or a substrate, and a manufacturing method thereof. . [Structure] An insulating film 12 was formed on a silicon substrate 10, and a tungsten film 14 was formed on the insulating film 12. Further, the surface of the tungsten film 14 is irradiated with plasma to form an amorphous W-N film 16. The copper wiring 20 was formed on the film 16. |