http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06326052-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1993-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1c2087ace38fc466b0f4ae770104c0 |
| publicationDate | 1994-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06326052-A |
| titleOfInvention | Thin film formation method |
| abstract | (57) [Summary] [Objective] A titanium film is formed at the bottom of a high aspect ratio contact hole by a substitution reaction using a gas having a reducing action. [Structure] An n + diffusion layer 2 is formed on a substrate 1, and an oxide film window is opened by dry etching. The Al film 4 is selectively grown on the bottom of the contact hole by the CVD method. Here, the Ti film is formed by replacing the Al film with the Ti film 5 using TiCl 4 gas. After that, nitriding is performed in a nitrogen atmosphere to form a TiN film 6 / TiSi 2 film 7 structure, and then a W film 8 is selectively grown by a CVD method to fill the contact hole portion. |
| priorityDate | 1993-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.