http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06326037-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1993-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c32f85c4fdd52e5748650ee009f7e97c |
| publicationDate | 1994-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06326037-A |
| titleOfInvention | Method and apparatus for growing silicon epitaxial film |
| abstract | (57) [Abstract] [Purpose] To grow a silicon-carbon mixed crystal uniformly over a large area. Further, without depositing a polycrystal on the silicon oxide film or the silicon nitride film, the silicon-carbon mixed crystal is selectively grown only on the semiconductor surface such as silicon on the same substrate. [Structure] A gaseous raw material containing silicon atoms and a gaseous raw material containing carbon atoms are simultaneously irradiated onto a substrate having a semiconductor surface. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009521801-A |
| priorityDate | 1993-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.