http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06314657-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2077 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 |
| filingDate | 1993-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12123321bf5b4e44fe41e0b3e8c2eab2 |
| publicationDate | 1994-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06314657-A |
| titleOfInvention | Method for manufacturing optical semiconductor element |
| abstract | (57) [Abstract] [Purpose] SiO 2 conventionally used as a selective growth mask. And SiN x are used when the growth temperature is low or when MOVP In E, when the growth pressure is high or the mask area is large, a polycrystal is deposited on it. Further expand the conditions for selective growth that does not cause polycrystal deposition. [Structure] When a conventional mask is used, dangling bonds are present in the film, and these bonds combine with the adsorbed species of Group 3 and Group 5 raw materials flying on the mask, which contributes to polycrystalline deposition. It is expected that the use of the mask 21 made of MoSe 2 grown by MBE will improve the selectivity without binding to the adsorbed species of the Group 3 and Group 5 raw material on the film because there are no dangling bonds on the film surface. It In MOVPE, selective growth is possible even at a higher growth pressure, and by performing selective growth at 300 Torr or more, the wavelength change of the MQW structure depending on the mask width is wider than in the conventional case. In the element in which the DFB laser formed by selective growth and the semiconductor optical modulator are integrated, loss is reduced and the modulation band is expanded. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101009408-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08292336-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150083783-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11251686-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6134368-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6228671-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6111904-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6204078-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5918109-A |
| priorityDate | 1993-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.