http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06310518-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1993-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc7668ee1d07ba86e899efee14abb048 |
| publicationDate | 1994-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06310518-A |
| titleOfInvention | Method for manufacturing bipolar semiconductor device |
| abstract | (57) [Abstract] [Purpose] There is no residual stress in the active base formation region, no junction leak between collector and base, no leak between collector and emitter, and no decrease in current amplification factor at low emitter current. Provided is a method for manufacturing a bipolar semiconductor device which can reduce the collector-base junction capacitance without lowering the base-collector breakdown voltage. The active base formation region is formed only by an etching technique without selective oxidation, and is connected to the second polycrystalline silicon film 112A and the first polycrystalline silicon film (base electrode polycrystalline silicon film) 106, Self-aligned, The inactive base layer 1 is formed around the active base layer 116 by the impurity-doped second polycrystalline silicon film 112A. 13 is formed. In addition, the first polycrystalline silicon film 106 Since the first oxide film 105 exists below, the inert base layer 113 is formed so as not to contact the element isolation oxide film 104. |
| priorityDate | 1993-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.