| abstract |
(57) [Summary] [Object] To provide a pattern forming method capable of etching a thin film in a stepped portion of a substrate with high precision. [Structure] Using a photosensitive gas phase polymerized polyamic acid gas phase polymerized film having a methacryloyl group or an acryloyl group in a side chain as a resist film, or a laminated film of this and a carbon film, Pattern the thin film to be processed. [Effect] The vapor-phase polymerized film is excellent in step coverage, and the resist is formed thin at the step. Further, since exposure to ultraviolet light and development with an alkaline aqueous solution can be carried out, the pattern can be formed with high accuracy by utilizing a normal photoprocess. Further, reattachment of milling particles at the time of ion milling can be prevented, and the dimensional accuracy of the pattern to be processed can be improved. |