| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f1132cfcd850b4afa5da3f9e093c614 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 |
| filingDate |
1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_812eed9a1163ec4beb04c6ffa00b8ebf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d3f323495c5b1b78a97c57bdc4bd307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14b24392f25a8fd7b841a03b7692ea19 |
| publicationDate |
1994-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06305714-A |
| titleOfInvention |
Method for forming ferroelectric film and method for manufacturing capacitor by sol-gel method |
| abstract |
(57) [Summary] [Structure] When the PZT ferroelectric film 7 is formed by the sol-gel method, the film thickness is controlled to be 1000 Å, or the drying temperature of the raw material solution is 130 to 2 A method in which the boiling point is specified to be in the range of 00 ° C., and is set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. [Effect] By carrying out the oxidative sintering treatment at a temperature at which a perovskite crystal is formed, a thin film exhibiting a (100) crystal orientation can be easily formed. In addition, a completely crack-free film can be formed thick. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6336716-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6343855-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010018510-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9811613-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6247799-B1 |
| priorityDate |
1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |