| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f1132cfcd850b4afa5da3f9e093c614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_621908cf9cac8899c5d4a9b48a1f75aa |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 |
| filingDate |
1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1ac350f06c09ad96bfcd59ed17989b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50bcab7afad951fa9508de0acb920612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57f495810432699372452d6ef0503fe5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65145ce0fc5af8978b74fbf45b74db1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bef475fe8ecdabafda3679f652c6b320 |
| publicationDate |
1994-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06305713-A |
| titleOfInvention |
Method for forming ferroelectric film by sol-gel method, method for manufacturing capacitor, and raw material solution thereof |
| abstract |
(57) [Summary] [Structure] Diethanol (D Pb for coating, drying and oxidative sintering so that the concentration of EA) is a relatively high concentration (DEA / total metal atoms)> 3 in a molar ratio. Method for forming (Zr, Ti) O 3 thin film and raw material solution thereof. [Effect] Pb (Zr, Ti) O having a perovskite crystal structure is obtained even when oxidative sintering is performed at a relatively low temperature of about 450 ° C. Ferroelectric thin films such as 3 can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013136502-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007126719-A |
| priorityDate |
1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |