| abstract |
(57) [Summary] [Object] In the method for forming a perovskite-type oxide dielectric thin film, the substrate temperature is controlled by irradiating the substrate with infrared light from the outside of the reaction chamber where the dielectric compound is deposited. The raising / lowering time is greatly shortened, and further, variations in film characteristics such as composition between substrate installation positions are reduced. [Structure] In the sputtering chamber 1, a sintered oxide ferroelectric material such as Pb 0.79 La 0.21 Ti 0.95 O 3 is used. (Sintered with 0 to 40 mol% excess of PbO) was used as the target 2. Substrate 3 is MgO It is a single crystal substrate. Infrared light emitted outside the reaction chamber passes through a quartz glass plate 4 having a thickness of 3 mm and a diameter of 5 inches attached to the lid of the chamber and enters the vacuum chamber. Then, this infrared light heats the back side of the substrate holder-5 to which the MgO substrate 3 is attached by radiation, and as a result, the substrate holder 5 The heat conducted from heats the substrate 3. |