http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06296028-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_216a7faed04ec9497c9819cc03c04599 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 1993-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_488bb88b1dfba866d59ef46651074633 |
| publicationDate | 1994-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06296028-A |
| titleOfInvention | Method of manufacturing semiconductor nonvolatile memory element |
| abstract | (57) [Summary] [Structure] A step of nitriding a semiconductor substrate to form a tunnel silicon nitride film 12 on a surface region of the semiconductor substrate, and a tunnel silicon oxide film formed on the tunnel silicon nitride film by chemical vapor deposition. 13, a step of forming a silicon nitride film on the tunnel silicon oxide film by a chemical vapor deposition method, a step of forming a silicon oxide film on the silicon nitride film, and a step of forming a conductive film on the silicon oxide film. And a step of forming a gate electrode by photoetching. [Effect] Compared to the conventional method, a thick tunnel silicon oxide film can be formed on a thin tunnel silicon nitride film, so that the tunnel silicon nitride film can be formed at a low temperature in a short time, and the manufacturing time can be shortened. This makes it possible to suppress variations in device characteristics. In addition, since the tunnel silicon oxide film can be thickened, it is possible to improve memory retention. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0851509-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0851509-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518617-B1 |
| priorityDate | 1993-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.