| abstract |
(57) [Summary] [Structure] A vapor phase growth film is formed on the address gate electrode 15, and then the vapor phase growth film on the side wall of the address gate electrode is removed to form a side wall opening. Impurities are introduced to form an impurity region, a memory gate insulating film 23 and a memory gate electrode 27 are further formed, and then a source / drain region 29 is formed. [Effect] It is possible to prevent the phenomenon that weak writing is performed, and a highly reliable semiconductor nonvolatile memory device can be obtained. |