http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06283586-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cfa11ef6f0c5577b4612b415ff30253 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_333ad4ff8744c96087487df526c5423d |
publicationDate | 1994-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H06283586-A |
titleOfInvention | Method for measuring coverage of oxide film on silicon wafer surface |
abstract | (57) [Summary] [Object] An object of the present invention is to provide a method for measuring the coating rate of an oxide film on the surface of a silicon wafer, which can perform the measurement easily and can accurately determine the coating rate. To do. [Structure] Longitudinal wave optical mode of superwavelength polar lattice vibration at the time when the surface of a reference wafer is saturated with an oxide film (L O), the step of measuring the peak intensity of the longitudinal wave optical mode (LO) of the superwavelength polar lattice vibration of the oxide film on the surface of the measurement wafer, and the peak at the saturation point. And a step of obtaining the ratio of the peak intensity of the measurement wafer to the intensity as a coating rate. |
priorityDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.