http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06260500-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 1993-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c2a67fb99e7382117013c02604c37c |
| publicationDate | 1994-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06260500-A |
| titleOfInvention | Method of manufacturing thin film transistor |
| abstract | (57) [Abstract] [Purpose] To improve yield and characteristics in a manufacturing process of a thin film transistor characterized in that impurities are activated by irradiating strong light such as laser light. An insulating film existing on the surface of the semiconductor region is self-aligned by introducing impurities into a semiconductor region having an insulating film on its surface using a doping mask and a gate electrode as masks. Is etched, and then intense light such as a laser is irradiated. Through the above steps, the problems of the reaction between the semiconductor region and the insulating film and the insufficient activation at the boundary between the impurity regions, which have conventionally been the cause of the yield reduction and the instability of the characteristics, are overcome. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6992435-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7476900-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6077730-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6853083-B1 |
| priorityDate | 1993-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.