http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06252045-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1993-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362b58d06dc4301a9cd2199d0ad984b4 |
| publicationDate | 1994-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06252045-A |
| titleOfInvention | Method for manufacturing metal film / compound semiconductor laminated structure on elemental semiconductor substrate |
| abstract | (57) [Abstract] [Purpose] High quality III on group IV semiconductor single crystal substrate -Metal Film Having Group V Compound Semiconductor Single Crystal Layer / III- A method for manufacturing a group V compound semiconductor laminated structure is obtained. [Structure] A multilayer film including an AlGaAs spacer layer 3 and an InP layer 4 is grown on a Si substrate 1 to form a mesa. Next, a SiO 2 supporting thin film 7 is formed except for a part of the side surface of the mesa. The 1GaAs spacer layer 3 is selectively removed by etching from the exposed cross section. Next, P is thermally desorbed from the exposed portion of the InP layer 4 to be converted into the metal In layer 8, and the upper and lower layers are pressure-bonded through the metal In layer 8 at a melting point of In of about 157 ° C. or higher, and then the SiO 2 film 6 and The SiO 2 supporting thin film 7 is removed. Since the metal In layer absorbs almost 100% of thermal strain at the melting point or higher, residual thermal strain of the upper layer can be reduced. Further, a defect reduction layer may be grown. For example, by forming a mesa side wall vertically and performing MBE growth from above, the upper part and the other parts than the metal In layer can be substantially separated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9101922-A1 |
| priorityDate | 1993-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.