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filingDate 1993-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbd4f2b4095bb6490993b3d1458147e8
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publicationDate 1994-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06244128-A
titleOfInvention Method for forming electrode on p-type semiconductor substrate
abstract (57) [Abstract] [Purpose] Reproduction is performed by exposing a desired portion of a p-type II-VI group semiconductor substrate to plasma containing one or more acceptor impurity elements, and then forming a metal electrode thereon. A p-type ohmic electrode having good contact and low contact resistance is formed on a II-VI group semiconductor substrate. [Structure] A high concentration region of N is formed in the vicinity of the surface of the ZnSe substrate 1 by exposing the p-type ZnSe substrate 1 to a nitrogen plasma 4, and Au is sputter-deposited thereon to form an ohmic electrode. . The desired pattern region of the ZnSe substrate 1 which is not protected by the resist 3 is exposed to the generated nitrogen plasma 4 and, as a result, is sputter-etched and at the same time a large amount of N is added near the substrate surface.
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