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filingDate 1993-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01bde6ddf2ffbcc40d9ef5f37bde9b28
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publicationDate 1994-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06224491-A
titleOfInvention Isotropically conductive device
abstract (57) [Summary] [Purpose] To form a thin film of an isotropic conductive material from Sr 1-x Ca x RuO 3 . The material is easily deposited as a thin film by methods such as 90 ° off-axis sputtering and laser ablation. This material is deposited on a variety of substrates and is also capable of top epitaxial growth of many important oxides such as superconducting oxides, dielectrics, and ferroelectric materials.
priorityDate 1992-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 28.