| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79b5f9d76648dfc226a261cfb970de9c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B26-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-45 |
| filingDate |
1993-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0636afba76c536e97e94c2d43dc73457 |
| publicationDate |
1994-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06216365-A |
| titleOfInvention |
Independently addressable semiconductor laser with low-loss integrated passive waveguide |
| abstract |
(57) Abstract [Purpose] To increase the density of independently addressable semiconductor diode lasers within a monolithic semiconductor structure. In the monolithic semiconductor structure 40, a passive optical waveguide 58 couples a laterally offset generation waveguide 56 that generates a light wave to a mirror 52. The passive optical waveguide 58 also couples a detection region for measuring the intensity of light in the laser resonant cavity and an adjustable absorption region for tuning the wavelength of the light wave generated by the generation waveguide 56. The electrically passive interconnection of the functional devices in the laser resonant cavity makes it possible to laterally offset the basic device. Lateral offsets and passive optical interconnections extend the area of electrical crossover, which greatly simplifies the independently addressable device contacts on each chip, reducing their density and number. Will increase. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11145561-A |
| priorityDate |
1992-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |