| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1993-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
1994-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06216156-A |
| titleOfInvention |
MIS semiconductor device and method of manufacturing the same |
| abstract |
(57) [Abstract] [Purpose] An object is to manufacture a highly reliable MIS semiconductor device by a low temperature process. Concerning a method for manufacturing a MIS type semiconductor device, an impurity region is selectively formed on a semiconductor substrate or a semiconductor thin film, and then a laser or strong light equivalent thereto is applied to a boundary between the impurity region and an active region adjacent to the impurity region. A method for manufacturing a semiconductor device, which comprises activating by irradiating a laser or strong light equivalent thereto with a laser from above. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6613613-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7244962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012124508-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11354797-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000004025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6417543-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9045831-B2 |
| priorityDate |
1993-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |