| abstract |
(57) [Summary] [Objective] For example, in a system using NH 3 and a source gas such as TMG or TMA, a compound semiconductor vapor phase having excellent composition uniformity and reproducibility for forming a film on a crystal substrate. Provide a growth device. A cross-sectional shape of the plurality of flow channels is substantially quadrangular, and adjacent flow channels are connected to each other immediately before the vicinity of the substrate by a communication hole capable of forming a laminated flow of two or more source gases. Configured to. |