http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0620968-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1992-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362b58d06dc4301a9cd2199d0ad984b4 |
| publicationDate | 1994-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0620968-A |
| titleOfInvention | Metal film / compound semiconductor laminated structure on elemental semiconductor substrate and manufacturing method thereof |
| abstract | (57) [Abstract] [Purpose] High quality III on group IV semiconductor single crystal substrate -Metal Film Having Group V Compound Semiconductor Single Crystal Layer / III- A V-group compound semiconductor laminated structure and a method for manufacturing the same are obtained. [Structure] A GaAs layer 3, an InP layer 4, and a GaAs layer 5 are selectively grown in order on a part of a Si substrate 1 by using a SiO 2 film 2 as a mask. By introducing the GaAs / GaAs strained superlattice layer 6, the dislocation density at the growth temperature is first sufficiently reduced. Next, the desorption of P from the InP surface is large, but the desorption of As from the GaAs surface is set to a sufficiently small temperature and the supply of the group V source gas is stopped. Since P is desorbed from the cross section of the InP single crystal layer 4 whose part is exposed on the facet plane, the InP single crystal layer 4 can be converted into the metal In layer 8. If cooled after that, the melting point is about 157 ° C. Up to the vicinity, the liquid metal In layer absorbs almost 100% of thermal strain, so that new dislocations do not occur. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018073999-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016004942-A |
| priorityDate | 1992-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.