http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06196438-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1992-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaaefdc2df8c04d65de38dd0fd9dc0f8 |
| publicationDate | 1994-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06196438-A |
| titleOfInvention | Method for forming titanium thin film |
| abstract | (57) [Summary] [Structure] Using an organic titanium compound having an aliphatic titanium alkoxide or an aliphatic diketone as a ligand as a raw material, and forming a titanium thin film on a substrate by a CVD method in the presence of steam gas. A method for forming a titanium thin film, comprising: [Effect] By holding the substrate on which the titanium thin film is formed at a temperature slightly higher than the decomposition temperature of the raw material gas used, and reacting the raw material gas heated to the decomposition temperature with the steam gas in the vicinity of the substrate, titanium atoms are converted into the substrate. An organic compound such as an aliphatic alcohol or an aliphatic diketone attached on the substrate and produced by the reaction is sublimated by the heat of the heated substrate. An organic titanium compound having an aliphatic titanium alkoxide or an aliphatic diketone as a ligand is relatively stable and has a high vapor pressure. Therefore, a titanium thin film with good coverage and less impurities can be formed by a low temperature process. |
| priorityDate | 1992-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.