http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06196436-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c18e37c7618354a1bf043ed5d94b7a5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1992-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_081bb1f9002c712095f490d6d37b8ce6 |
| publicationDate | 1994-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06196436-A |
| titleOfInvention | Semiconductor device and its inspection method |
| abstract | (57) [Abstract] [PROBLEMS] To provide a semiconductor device and an inspection method capable of detecting abnormalities in electrical characteristics immediately under a gate electrode earlier and more accurately in a manufacturing process of a MOS semiconductor. A semiconductor device in which a high-concentration impurity is introduced into a polycrystalline silicon layer by thermal diffusion to form an inspection polycrystalline silicon electrode for a gate, a source, and a drain. Using this semiconductor device, a test needle is applied to each polycrystalline silicon electrode for inspection to inspect the electrical characteristics. |
| priorityDate | 1992-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.