http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06196121-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 |
| filingDate | 1992-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0db1b7e4e16fe16f93806eee454a2050 |
| publicationDate | 1994-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06196121-A |
| titleOfInvention | Ion implantation method |
| abstract | (57) [Summary] [Object] The present invention is to provide an ion implantation method capable of bringing a vacuum chamber into a high vacuum state. An ion beam 20 is generated by an ion source 12 from a material gas composed of phosphine containing phosphorus as a dopant substance and argon for diluting the phosphine, and an electrically neutral one of argon is pumped. 21. With the above configuration, since the gas for diluting the phosphine is argon, the molecular weight is large and heavy. Therefore, the diluent gas can be sufficiently removed by degassing, and the vacuum chamber can be brought to a high vacuum state. |
| priorityDate | 1992-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.