http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06180299-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 1992-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0bfd4952635c5fc07dd3a37194ea32 |
| publicationDate | 1994-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06180299-A |
| titleOfInvention | Thin film gas sensor and manufacturing method thereof |
| abstract | (57) [Abstract] [Purpose] To obtain a thin film gas sensor with excellent sensitivity. [Structure] A gas sensitive layer 4 made of a metal oxide semiconductor and a sensitizing oxide solid-dissolved in a metal oxide semiconductor is formed on a substrate 1. The gas sensitive layer 4 is formed by the plasma controlled sputtering method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007240462-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100483180-B1 |
| priorityDate | 1992-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.